2008. 10. 2 1/7 semiconductor technical data kf13n50p/f n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features ? v dss = 500v, i d = 13a ? drain-source on resistance : r ds(on) =0.44 ? (max) @v gs = 10v ? qg(typ.) = 35nc maximum rating (tc=25 ? ) dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 * : drain current limited by maximum junction temperature. g d s to-220is (1) a a b b c c d d e e f f g g h h 1.47 max 1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ 1. gate 2. drain 3. source characteristic symbol rating unit kf13n50p KF13N50F drain-source voltage v dss 500 v gate-source voltage v gss ?? 30 v drain current @t c =25 ? i d 13 13* a @t c =100 ? 8 8* pulsed (note1) i dp 40 40* single pulsed avalanche energy (note 2) e as 860 mj repetitive avalanche energy (note 1) e ar 19.5 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 208 49.8 w derate above 25 ? 1.66 0.4 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 0.6 2.51 ? /w thermal resistance, junction-to- ambient r thja 62.5 62.5 ? /w KF13N50F kf13n50p equivalent circuit
2008. 10. 2 2/7 kf13n50p/f revision no : 1 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 500 - - v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250 a, referenced to 25 ? - 0.63 - v/ ? drain cut-off current i dss v ds =500v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = ?? 30v, v ds =0v - - ?? 100 na drain-source on resistance r ds(on) v gs =10v, i d =6.5a - 0.35 0.44 ? dynamic total gate charge q g v ds =400v, i d =13a v gs =10v (note4,5) - 35 - nc gate-source charge q gs - 9 - gate-drain charge q gd - 13 - turn-on delay time t d(on) v dd =250v i d =13a r g =25 ? (note4,5) - 28 - ns turn-on rise time t r - 45 - turn-off delay time t d(off) - 105 - turn-off fall time t f - 55 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1445 - pf output capacitance c oss - 210 - reverse transfer capacitance c rss - 20 - source-drain diode ratings continuous source current i s v gs 2008. 10. 2 3/7 kf13n50p/f revision no : 1 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 10 2 79 510 38 6 4 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.4 0.6 1.8 1.2 1.6 reverse drain current i s (a) 0.8 0.4 0.2 0.6 010 520 15 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 6.5a v gs = 0v i ds = 250 100 c 25 c 100 c 25 c 1100 0.1 10 0.1 1 10 100 v gs =10v v gs =6v v gs =10v v gs =6v v ds =20v v gs =5v
2008. 10. 2 4/7 kf13n50p/f revision no : 1 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) 0 12 10 6 2 4 8 35 40 15 5 25 20 30 10 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) drain current i d (a) drain - source voltage v ds (v) fig10. safe operation area drain current i d (a) (kf13n50p) (KF13N50F) i d =13a c junction temperature t j ( ) fig11. i d - t j v ds = 400v v ds = 250v v ds = 100v 10 1 10 2 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 operation in this area is limited by r ds(on) t c = 25 t j = 150 single pulse c c dc 10ms 1ms 100 s 10 s 100ms fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 10 1 10 2 10 3 10 4 0 10 2 6 14 8 4 12 75 150 125 50 100 25 010203 040 c rss c oss c iss 10 2 10 1 10 0 10 1 10 0 10 -1 10 2 10 3 operation in this area is limited by r ds(on) t c = 25 t j = 150 single pulse c c dc 10ms 1 m s 100 s 100ms
2008. 10. 2 5/7 kf13n50p/f revision no : 1 time (sec) (kf13n50p) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 fig12. transient thermal response curve transient thermal resistance duty=0.5 single p ul se 0.05 time (sec) fig13. transient thermal response curve transient thermal resistance 0.02 0.2 0.01 0.1 t 1 t 2 p dm - duty factor, d= t 1 /t 2 - r th(j-c) = 0.6 c/w max. (KF13N50F) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 duty=0 .5 single p ulse 0.05 0.02 0.2 0.01 0.1 t 1 t 2 p dm - duty factor, d= t 1 /t 2 - r th(j-c) = 2.51 c/w max.
2008. 10. 2 6/7 kf13n50p/f revision no : 1 fig14. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig16. resistive load switching fig15. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2008. 10. 2 7/7 kf13n50p/f revision no : 1 fig17. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.8 v dss
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